0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 mmb t4403 features ideal f or me dium power am plific ation and switching com plem entary npn type available (m mbt4401) absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo -40 v collector-emit ter voltage v ceo -40 v em itt er-b ase voltage v ebo -5 v collector current i c -600 m a total device diss ipation alum ina subst rate p d 300 m w thermal resist ance, j unction?to?am bient r ja 417 /w junct ion and storage temperature t j , t stg -55 to150 el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditons min typ ma x unit collector-b ase breakdow n voltage v (br)cbo i c = 100a, i e = 0 -40 v collector-e m itt er bre akdow n voltage v (br)ceo i c = 1.0 m a, i b = 0 -40 v em itt er- base brea kdow n voltage v (br)ebo i e =100a, i c = 0 -5 v collector cut-off c urr ent i cbo v cb =-35 v, i e =0 -0.1 a em itt er cut-off curren t i ebo v eb =-4v, i c =0 -0.1 a dc curre nt gain * h fe i c = -0.1 m a, v ce = -1.0 v i c = -1.0 m a, v ce = -1.0 v i c = -10 m a, v ce = -1.0 v i c = -150 m a, v ce = -2.0 v i c = -500 m a, v ce = -2.0 v 30 60 100 100 20 300 i c = -150 m a, i b = -15 m a -0.4 i c = -500 m a, i b = -50 m a -0.75 i c = 150 m a, i b = 15 m a -0.95 i c = 500 m a, i b = 50 m a -1.3 transition frequen cy f t i c = 20 m a, v ce = 10 v, f = 100 m hz 200 mh z delay ti m e t d v cc = 30 v, v eb = 2.0 v, 15 ns rise ti m e t r i c = 150 m a, i b1 = 15 m a 20 ns storage tim e t s v cc = 30 v, i c = 150 m a, 225 ns fall ti m e t f i b1 = i b2 = 15 m a 30 ns * p ulse t est: pulse wid th 300 s , duty c ycle 2.0%. v v collector-e m itt er saturation voltage * base-em itt er saturation voltage * v ce( sat) v be( sat) product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditons min typ ma x unit collector-b ase breakdow n voltage v (br)cbo i c = 100a, i e = 0 -40 v collector-e m itt er bre akdow n voltage v (br)ceo i c = 1.0 m a, i b = 0 -40 v em itt er- base brea kdow n voltage v (br)ebo i e =100a, i c = 0 -5 v collector cut-off c urr ent i cbo v cb =-35 v, i e =0 -0.1 a em itt er cut-off curren t i ebo v eb =-4v, i c =0 -0.1 a dc curre nt gain * h fe i c = -0.1 m a, v ce = -1.0 v i c = -1.0 m a, v ce = -1.0 v i c = -10 m a, v ce = -1.0 v i c = -150 m a, v ce = -2.0 v i c = -500 m a, v ce = -2.0 v 30 60 100 100 20 300 i c = -150 m a, i b = -15 m a -0.4 i c = -500 m a, i b = -50 m a -0.75 i c = 150 m a, i b = 15 m a -0.95 i c = 500 m a, i b = 50 m a -1.3 transition frequen cy f t i c = 20 m a, v ce = 10 v, f = 100 m hz 200 mh z delay ti m e t d v cc = 30 v, v eb = 2.0 v, 15 ns rise ti m e t r i c = 150 m a, i b1 = 15 m a 20 ns storage tim e t s v cc = 30 v, i c = 150 m a, 225 ns fall ti m e t f i b1 = i b2 = 15 m a 30 ns * p ulse t est: pulse wid th 300 s , duty c ycle 2.0%. v v collector-e m itt er saturation voltage * base-em itt er saturation voltage * v ce( sat) v be( sat) 2t mark ing mar king sales@twtysemi.com 2 of 2 http://www.twtysemi.com mmb t4403 product specification 4008-318-123
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